Atomic state and characterization of nitrogen at the SiC/SiO2 interface

نویسندگان

  • Y. Xu
  • X. Zhu
  • H. D. Lee
  • C. Xu
  • S. M. Shubeita
  • A. C. Ahyi
  • Y. Sharma
  • J. R. Williams
  • W. Lu
  • S. Ceesay
  • B. R. Tuttle
  • A. Wan
  • S. T. Pantelides
  • T. Gustafsson
  • E. L. Garfunkel
  • L. C. Feldman
چکیده

Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel, and L. C. Feldman Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA Department of Physics, Auburn University, Auburn, Alabama 36849, USA Air Force Research Lab, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA Vanderbilt Institute of Nano-scale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, USA Evans Analytical Group, East Windsor, New Jersey 08520, USA

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تاریخ انتشار 2014